| No. | Partie # | Fabricant | Description | Fiche Technique |
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VBsemi |
P-Channel MOSFET • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available R |
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VBsemi |
P-Channel MOSFET • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter G1 S2 3D Top View G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Param |
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VBsemi |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwi |
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