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VB2658 |
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| Part Number | VB2658 |
| Manufacturer | VBsemi |
| Description | VB2658 P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 12 3.8 5.1 Single 0.05 TO-236 (SOT-23) G1... |
| Features |
• Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available RoHS* COMPLIANT S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation P... |
| Document |
 VB2658 Data Sheet
PDF 920.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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| 2 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
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| 3 | VB20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
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| 4 | VB20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
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| 5 | VB20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|