| No. | Partie # | Fabricant | Description | Fiche Technique |
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UNIKC |
P-Channel MOSFET |
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UNIKC |
P-Channel Enhancement Mode MOSFET reakdown Voltage V(BR)DSS VGS = 0V, ID = -250mA -40 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250mA -1.5 -2.2 -3.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V VDS = -30 |
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UNIKC |
N-Channel MOSFET rain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 110 2 3.2 4 ±100 Zero Gate Voltage Drain Current IDSS VDS = 88V, VGS = 0V VDS = 80V, VG |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET down Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±25V 150 V 2.5 3.5 4.5 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V |
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UNIKC |
P-Channel MOSFET TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = -250mA VDS = VGS, ID = -250mA VDS = 0V, VGS = ±20V -40 V -1.5 -2.2 -3 ±100 nA Zero Gate Voltage Drain Current On-State D |
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UNIKC |
N-Channel MOSFET 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V |
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UNIKC |
N-Channel MOSFET reakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA 150 V 2.5 3.5 4.5 VDS = 0V, VGS = ±25V ±100 nA VDS = 120V, VGS = 0V VDS = 100V, VGS |
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UNIKC |
N-Channel MOSFET ed) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V 500 V 2 2.7 4 |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
MOSFET |
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UNIKC |
MOSFET |
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UNIKC |
MOSFET |
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UNIKC |
MOSFET |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel Transistor |
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UNIKC |
N-Channel Transistor |
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UNIKC |
N-Channel MOSFET TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS |
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UNIKC |
N-Channel MOSFET TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS |
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