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Features
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TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V
650 2 3.2
4
V
±100 nA
Gate Voltage Drain Current
Drain-Source On-State Resistance1
IDSS RDS(ON)
VDS = 650V, VGS = 0V, TC = 25 °C VDS = 520V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 8A
1 mA
100 175 225 mΩ
Forward Transconductance1
gfs
VDS = 10V, ID = 8A
13 S
DYNAMIC
Input Capacitance
Ciss
1762
Output Capacitance
Reve...
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P1665ZTF Data Sheet
