Features
|
reakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS VGS(th) IGSS
IDSS
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA
150 V
2.5 3.5 4.5
VDS = 0V, VGS = ±25V
±100 nA
VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V , TJ = 125 °C
1 mA
10
Drain-Source On-State Resistance1
RDS(ON)
VGS = 7V, ID = 20A VGS = 10V, ID = 20A
13.5 18.5 mΩ
12.5 16.5
Forward Transconductance1
gfs
VDS = 10V, ID = 20A
37
S
DYNAMIC
Input Capacitance
Ciss
3426
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
523
pF
Reverse Transfer Capacitance
Crss
198
Gate R...
|