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UNIKC |
P-Channel Enhancement Mode MOSFET e Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Ga |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transcond |
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UNIKC |
MOSFET |
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UNIKC |
MOSFET |
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UNIKC |
N-Channel MOSFET °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transcond |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V VDS =48V, VGS = 0V VDS =40V, VGS = 0V, TJ = |
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UNIKC |
N-Channel MOSFET Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 65 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2.0 2.8 4.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = 52V, VGS = 0V VDS = 50 |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V VDS =48V, VGS = 0V VDS =40V, VGS = 0V, TJ = |
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UNIKC |
N-Channel MOSFET STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V VDS =48V, VGS = 0V VDS =40V, VGS = 0V, TJ = |
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UNIKC |
N-Channel MOSFET ETF N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(B |
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UNIKC |
N-Channel Transistor |
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UNIKC |
N-Channel Enhancement Mode MOSFET Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 40 1.5 1.7 3 ±100 Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V , TJ = 125 °C 1 10 On-St |
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UNIKC |
N-Channel Enhancement Mode MOSFET ETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 Input Capacitance Output Ca |
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UNIKC |
N-Channel MOSFET Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 60 1.3 1.8 2.3 ±100 Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V VDS = 40 |
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UNIKC |
N-Channel MOSFET |
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