P1004BD |
Part Number | P1004BD |
Manufacturer | UNIKC |
Description | P1004BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 10mΩ @VGS = 10V ID 55A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Note... |
Features |
ETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge
2 2
LIMITS MIN 40 1.7 2.0 3.0 ±100 1 10 120 13 8 25 1550 1750 310 200 2.5 32 8.5 10 33 65 23 38 17 10 TYP MAX
UNIT
V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf IS VSD trr Qrr
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS ... |
Document |
P1004BD Data Sheet
PDF 551.74KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | P1004B |
UNIKC |
N-Channel MOSFET | |
2 | P1004BD |
Niko-Sem |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | P1004BS |
UNIKC |
N-Channel Enhancement Mode MOSFET | |
4 | P1004HV |
UNIKC |
N-Channel MOSFET | |
5 | P100 |
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |