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Features
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Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V
60 1.3 1.8 2.3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V VDS = 40V, VGS = 0V , TJ = 125 °C
1 10
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON) gfs
VGS = 4.5V, ID = 20A VGS = 10V, ID = 20A VDS = 10V, ID = 20A
8.1 13 6.8 10 60
DYNAMIC
Input Capacitance
Ciss
1920
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
215
Reverse Transfer Capacitance
Crss
140
Gate Resistance
Rg V...
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P1006BI Data Sheet
