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Features
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ETF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V
700 V
2 2.8 4 ±100 nA
Gate Voltage Drain Current
Drain-Source On-State Resistance1 Forward Transconductance1
IDSS
RDS(ON) gfs
VDS = 700V, VGS = 0V , TC = 25 °C VDS = 560V, VGS = 0V , TC = 100 °
C VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
1 mA
100
0.77 0.91 mΩ
13
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P1070ETF Data Sheet
