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Tuofeng Semiconductor |
N-Channel MOSFET D Power MOSFET D 100% Rg Tested (SOT-23) G1 S2 3D Top View TF2306 *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS 30 "20 Continuous Drain Cu |
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Tuofeng Semiconductor |
N-Channel MOSFET aximum 100 170 55 Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) I |
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Tuofeng Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0 |
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Tuofeng Semiconductor |
N-Channel MOSFET itions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamic V(BR)DSS VGS(th) IGSS |
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Tuofeng Semiconductor |
P-Channel MOSFET r Technology Co., Ltd TF2303 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistan |
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Tuofeng Semiconductor |
P-Channel MOSFET n Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) IGSS Test Conditions VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistanc |
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Tuofeng Semiconductor |
N-Channel MOSFET D 100% Rg Tested (SOT-23) G1 S2 3D Top View TF2308 (A8)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS 60 "20 Continuous Drain Current (TJ = 150_C)a Pul |
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Tuofeng Semiconductor |
MOSFET F Typical 80 120 50 Maximum 100 166 60 Unit V A mJ A W _C Unit _C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2312 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static |
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Tuofeng Semiconductor |
MOSFET Source Voltage Continuous Drain Current, VGS @ -4.5V IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction |
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Tuofeng Semiconductor |
P-Channel MOSFET D TrenchFETr Power MOSFET APPLICATIONS D Load Switch D PA Switch (SOT-23) G1 S2 3D Top View TF2323 (D32TF) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Volt |
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Tuofeng Semiconductor |
P-Channel MOSFET TF2301 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transcond |
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Tuofeng Semiconductor |
P-Channel MOSFET NLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynam |
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Tuofeng Semiconductor |
N-Channel MOSFET SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistanc |
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Tuofeng Semiconductor |
N-Channel MOSFET 100 166 Unit V A W _C Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2304 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Volt |
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Tuofeng Semiconductor |
P-Channel MOSFET Power MOSFETs: 1.8 V Rated Pb-free Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID |
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Tuofeng Semiconductor |
P-Channel MOSFET /W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2309 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th) |
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Tuofeng Semiconductor |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET gy Co., Ltd TF2310 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Te |
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Tuofeng Semiconductor |
N-Channel MOSFET tor Technology Co., Ltd TF2314 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Symbol V(BR)DSS VGS(t |
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Tuofeng Semiconductor |
P-Channel MOSFET D TrenchFETr Power MOSFET APPLICATIONS D Load Switch (SOT-23) G1 S2 3D Top View TF2319 (C91T )* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source V |
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