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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.27Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -C |
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Truesemi |
N-Channel MOSFET • 20A,500V,Max.RDS(on)=0.26Ω @ VGS =10V • Low gate charge(typical 45nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS PD |
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Truesemi |
600V N-Channel MOSFET • 2.0A, 600V, RDS(on) = 5.00 @VGS = 10 V • Low gate charge ( typical 9nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability D GDS TO-220 GD S TO-220F ● ◀▲ G ● ● S Absolute Maximum Ratings TC = 25°Cunles |
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Truesemi |
600V N-Channel MOSFET • 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V • Low gate charge ( typical 48nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cun |
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Truesemi |
N-Channel MOSFET • 18.0A,500V,Max.RDS(on)=0.30 Ω @ VGS =10V • Low gate charge(typical 50nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS |
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Truesemi |
N-Channel MOSFET • 9.5A,200V,Max.RDS(on)=0.40 Ω @ VGS =10V • Low gate charge(typical 20nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS E |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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Truesemi |
600V N-Channel MOSFET ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS techn |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.38Ω • Ultra Low gate charge (typ. Qg = 38nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -C |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Max. RDS(on) = 0.6Ω • Ultra Low gate charge (typ. Qg = 14nC) • 100% avalanche tested Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID Drain-Source Voltage Drain Current -Continuous ( |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.6Ω • Ultra Low gate charge (typ. Qg = 25nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.85Ω • Ultra Low gate charge (typ. Qg = 15nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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Truesemi |
N-Channel MOSFET • 7A,650V,Max.RDS(on)=1.60Ω @ VGS =10V • Low gate charge(typical 29nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR |
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Truesemi |
N-Channel MOSFET • 9.0A, 500V, RDS(on) = 0.80Ω @VGS = 10 V • Low gate charge ( typical 30nC) • Fast wsitching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted |
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Truesemi |
N-Channel MOSFET • 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V • Low gate charge ( typical 15nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunle |
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Truesemi |
N-Channel MOSFET • 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V • Low gate charge ( typical 14nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability GDS TO-220 GD S TO-220F D { ● G◀▲ { ● ● {S Absolute Maximum Ratings TC = 25°Cunles |
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Truesemi |
N-Channel MOSFET • 13A,500V,Max.RDS(on)=0.48 Ω @ VGS =10V • Low gate charge(typical 45nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.42Ω • Ultra Low gate charge (typ. Qg = 35nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuou |
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Truesemi |
N-Channel MOSFET • 850V @TJ = 150 ℃ • Typ. RDS(on) = 1.1Ω • Ultra Low gate charge (typ. Qg = 15nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous |
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