Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
TSF2N60M |
Click to view a larger image
| Part Number | TSF2N60M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 2.0A, 600V, RDS(on) = 5.00 @VGS = 10 V • Low gate charge ( typical 9nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability D GDS TO-220 GD S TO-220F ● ◀▲ G ● ● S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipa... |
| Document |
 TSF2N60M Data Sheet
PDF 207.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSF2N60MZ |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSF2N70M |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSF204D00-S1 |
Token |
Saw Filters |
|
| 4 | TSF2080C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | TSF20H100C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier |
|