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TSF3N80M |
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| Part Number | TSF3N80M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V • Low gate charge ( typical 14nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability GDS TO-220 GD S TO-220F D { ● G◀▲ { ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Av... |
| Document |
 TSF3N80M Data Sheet
PDF 262.09KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSF3N80N |
Truesemi |
N-Channel MOSFET |
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| 2 | TSF302D00A-S4 |
Token |
Saw Filters |
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| 3 | TSF302D00B-S7 |
Token |
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| 4 | TSF303D825A-D1 |
Token |
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| 5 | TSF303D825B-S4 |
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