| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET ility upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is elect |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET ime Turn-on time Turn-off time Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 ¾ ¾ 1 mA V (BR) DSS ID = 100 mA, VGS = 0 50 ¾ ¾ V IDSS VDS = 50 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 5 V, ID = 0.1 mA 0.8 ¾ 2.5 V ïYfsï VDS = 5 V |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET nce Switching time Turn-on time Turn-off time Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 ¾ ¾ 1 mA V (BR) DSS ID = 100 mA, VGS = 0 50 ¾ ¾ V IDSS VDS = 50 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 5 V, ID = 0.1 mA 0.8 ¾ 2.5 V |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET propriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This tra |
|
|
|
|
Toshiba Semiconductor |
N-Channel Silicon MOSFET VDS = 10 V, VGS = 0 VGS (OFF) ïYfsï Ciss VDS = 10 V, ID = 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz Crss NF (1) VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, RG = 1 kW, ID = 0.5 mA, f = 10 Hz NF (2) VDS = 10 V, RG = 1 k |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET = 5 V, VGS = 0 V, f = 1 MHz VDG = 5 V, ID = 0 A, f = 1 MHz Note: IDSS classification GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA (G) (L) (V) ( ).......IDSS rank marking Min Typ. Max Unit ¾ ¾ -1.0 nA -20 ¾ ¾ V 6 ¾ 32 mA ¾ ¾ -2.5 V 15 25 ¾ mS ¾ |
|
|
|
|
Toshiba Semiconductor |
2SK184 |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18A30D 1: Gate (G) 2: Drain (D |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET capacitance Switching time Turn-on time Turn-off time Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 ¾ ¾ 1 mA V (BR) DSS ID = 100 mA, VGS = 0 50 ¾ ¾ V IDSS VDS = 50 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 5 V, ID = 0.1 mA 0.8 ¾ |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET eliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packagi |
|