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TK18A30D |
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| Part Number | TK18A30D |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK18A30D
1: Gate (G) 2: Drain (D) 3: Source (S)
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
300
V
Gate-source voltage
VGSS
±20
Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Revers... |
| Document |
 TK18A30D Data Sheet
PDF 223.91KB |
| Distributor | Stock | Price | Buy |
|---|
