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2SK1829 |
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| Part Number | 2SK1829 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High s... |
| Features |
eliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with caution.
Start of commercial production
1991-02 1 2014-03-01
Electrical Characteristics (Ta = 25°C)
2SK1829
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capaci... |
| Document |
 2SK1829 Data Sheet
PDF 272.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK182 |
Yoshino International |
(2SK180 - 2SK183) Power FET |
|
| 2 | 2SK1821 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK1821-01M |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | 2SK1821-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 5 | 2SK1822-01M |
Fuji Electric |
N-channel MOS-FET |
|