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TK18E10K3 |
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| Part Number | TK18E10K3 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MOSFETs Silicon N-channel MOS (U-MOS) TK18E10K3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admitta... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK18E10K3
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage
(RGS = 20 kΩ)
VDGR
100
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
18
A
... |
| Document |
 TK18E10K3 Data Sheet
PDF 264.52KB |
| Distributor | Stock | Price | Buy |
|---|
