No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
SILICON MINIATURE THYRISTOR |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -20-1998 BBY 53-02W Diode capacitance CT = f (V R) f = 1MHz 6 |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 10 V, f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998- |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) citance difference C1V-C3V C3V-C4V 0.3 VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance) 00 nA CT 62 2.65 76 3.1 pF CT1/CT28 22 ∆CT/CT – 2.5 – – % Ω – – – nH – rS Ls Package Outline SOD-323 Dimensions in mm Semiconductor Group 2 BB 641 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 0.25 0.09 0.6 19.3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) .3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistanc |
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Siemens Semiconductor Group |
TOPLED RG Super-Bright/ Hyper-Red GaAIAs-LED q q q q q q q q color of package: white double heterojunction in GaAIAs technology superior luminous intensity for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering me |
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Siemens Semiconductor Group |
PNP THYRISTOR TETRODE |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance) |
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Siemens Semiconductor Group |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance) T 51 39.6 2.6 2.5 56.5 43.4 2.8 2.7 15.5 20.9 0.85 0.6 61.5 47.2 3 2.9 17 23.2 2 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2 /CT25 CT1 /CT28 ∆CT/CT 14.5 18 - - VR = 2 V, VR = 25 V |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998-11-01 |
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Siemens Semiconductor Group |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) 10 3.8 – – nA pF – – IR CT 3.4 – CT2 CT20 Q 4.3 400 – – – – – 1.7 – – – – – – 10 nA pF Values typ. max. Unit |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners/ Bd I) 19.5 – – – C T rS LS Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2 |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Jul-04-1996 BBY 52 Diode capacitance CT = f (VR) f = 1MHz 2.4 pF CD 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2.5 3.0 V 4.0 VR |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) = 1MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Serien inductance IR 5.3 4.2 3.5 3.1 1.75 1.78 0.50 0.37 0.12 2 10 200 nA CT 4.5 3.4 2.7 2.5 6.1 5.2 4.6 3.7 pF CT1V/CT4V 1.55 2.2 pF C1V-C3V C3V-C4V rs CC Ls 1.4 0.30 - |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) ce rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Feb-04-1997 BBY 52-03W Diode capacitance CT = f (VR) f = 1MHz 2.4 pF CD 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2. |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f |
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Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161 |
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Siemens Semiconductor Group |
2M x 8 - Bit Dynamic RAM 2k Refresh include single + 3.3 V (± 0.3V) power supply, direct interfacing with high-performance logic device families. Ordering Information Type HYB 3117800BSJ-50 HYB 3117800BSJ-60 HYB 3117800BSJ-70 Pin Names A0 to A10 A0 to A9 RAS OE I/O1-I/O8 CAS WE Row Add |
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