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Q62702-B916 |
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| Part Number | Q62702-B916 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BBY 58-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communi... |
| Features |
.3 6.6 3.3 -
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
Capacitance ratio
CT1/C T3 CT1/C T4 rs CC Ls
2.8 -
-
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance Ω pF nH
VR = 1 V, f = 470 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Jul-30-1998 1998-11-01
BBY 58-02W
Diode capacitance CT = f (V R) f = 1MHz
Temperature coefficient of the diode capacitance TCc = f (VR)
10 -2
32
pF
1/°C
CT
24
T Cc
20 10 -3
16
12
8
4 10 -4 0.0 0.5 ... |
| Document |
 Q62702-B916 Data Sheet
PDF 14.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-B912 |
Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
|
| 2 | Q62702-B915 |
Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) |
|
| 3 | Q62702-B918 |
Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
|
| 4 | Q62702-B0825 |
Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
|
| 5 | Q62702-B0839 |
Siemens Semiconductor Group |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) |
|