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Q62702-B915 |
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| Part Number | Q62702-B915 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BBY 57-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation fo... |
| Features |
1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
Capacitance ratio
CT1/C T3 CT1/C T4 rs CC Ls
3 -
-
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance Ω pF nH
VR = 1 V, f = 470 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Jul-30-1998 1998-11-01
BBY 57-02W
Diode capacitance CT = f (V R) f = 1MHz
Temperature coefficient of the diode capacitance TCc = f (VR)
10 -1
40
pF
1/°C
CT
30
T Cc
10 -2
25
20
15
10 -3
10
5 10 -4 0.0
0 0.0
0.5
1.0
... |
| Document |
 Q62702-B915 Data Sheet
PDF 14.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-B912 |
Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
|
| 2 | Q62702-B916 |
Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
|
| 3 | Q62702-B918 |
Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
|
| 4 | Q62702-B0825 |
Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
|
| 5 | Q62702-B0839 |
Siemens Semiconductor Group |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) |
|