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Q62702-B664 |
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| Part Number | Q62702-B664 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BBY 52-03W Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type BBY 52-03W Marking Ordering Co... |
| Features |
ce
rs CC Ls
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group
2
Feb-04-1997
BBY 52-03W
Diode capacitance CT = f (VR) f = 1MHz
2.4 pF
CD
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0
1.5
2.0
2.5
3.0
V
4.0
VR
Semiconductor Group
3
Feb-04-1997
... |
| Document |
 Q62702-B664 Data Sheet
PDF 18.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Q62702-B663 |
Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
|
| 2 | Q62702-B607 |
Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance) |
|
| 3 | Q62702-B62 |
Siemens Semiconductor Group |
NPN SILICON EPIBASE TRANSISTORS |
|
| 4 | Q62702-B62 |
Siemens Semiconductor Group |
PNP SILICON EPIBASE TRANSISTORS |
|
| 5 | Q62702-B628 |
Siemens Semiconductor Group |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
|