Seme LAB BUL fiche technique

No.	Partie #	Fabricant	Description
1	BUL54AFI	Seme LAB	NPN Transistor • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to
2	BUL53A	Seme LAB	NPN Transistor 2.54 2.54 TO220 Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high acc
3	BUL55B	Seme LAB	NPN Transistor 2.54 2.54 TO220 Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high acc
4	BUL49A	Seme LAB	NPN Transistor • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to
5	BUL54	Seme LAB	NPN Transistor TO220 • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from bat
6	BUL54A	Seme LAB	NPN Transistor TO220 • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from bat
7	BUL55A	Seme LAB	NPN Transistor 2.54 2.54 TO220 Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high acc
8	BUL52B	Seme LAB	NPN Transistor TO220 • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from bat
9	BUL53BSMD	Seme LAB	NPN Transistor • Multi-Base design for efficient energy distribution across the chip. • SIgnificantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to bat
10	BUL54B	Seme LAB	NPN Transistor • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to
11	BUL54BFI	Seme LAB	NPN Transistor • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to
12	BUL56A	Seme LAB	NPN Transistor 2.54 2.54 TO220 Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high acc
13	BUL58	Seme LAB	NPN Transistor 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings a
14	BUL50A	Seme LAB	NPN Transistor 21.0 max 12.7 max 4.25 Dia. 4.15 1 2 3 • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tig
15	BUL52	Seme LAB	NPN Transistor TO220 • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from bat
16	BUL52AFI	Seme LAB	NPN Transistor 2.54 2.54 ISOLATED TO220 Pin 1 – Base Pin 2 – Collectorn Pin3 – Emitter • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and
17	BUL52BFI	Seme LAB	NPN Transistor • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to
18	BUL53B	Seme LAB	NPN Transistor 2.54 2.54 TO220 Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high acc
19	BUL54ASMD	Seme LAB	NPN Transistor • Multi –base design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from ba
20	BUL56BSMD	Seme LAB	NPN Transistor • LOW SATURATION VOLTAGE • ULTRA FAST TURN –ON AND TURN –OFF SWITCHING (tr / tf = 40ns) 1 3 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) APPLICATIONS 9 .6 9 .3 1 1 .5 1 1 .2 7 (0