BUL54A |
Part Number | BUL54A |
Manufacturer | Seme LAB |
Description | LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL54A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applicatio... |
Features |
TO220 • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collec... |
Document |
BUL54A Data Sheet
PDF 19.71KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUL54 |
Seme LAB |
NPN Transistor | |
2 | BUL54A-TO5 |
TT |
SILICON POWER NPN TRANSISTOR | |
3 | BUL54AFI |
Seme LAB |
NPN Transistor | |
4 | BUL54ASMD |
Seme LAB |
NPN Transistor | |
5 | BUL54B |
Seme LAB |
NPN Transistor |