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BUL54AFI |
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| Part Number | BUL54AFI |
| Manufacturer | Seme LAB |
| Description | LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL54AFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. 6.3 15.1 Designed for use in electronic bal... |
| Features |
• Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ISOLATED TO220 Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous... |
| Document |
 BUL54AFI Data Sheet
PDF 18.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUL54A |
Seme LAB |
NPN Transistor |
|
| 2 | BUL54A-TO5 |
TT |
SILICON POWER NPN TRANSISTOR |
|
| 3 | BUL54ASMD |
Seme LAB |
NPN Transistor |
|
| 4 | BUL54 |
Seme LAB |
NPN Transistor |
|
| 5 | BUL54B |
Seme LAB |
NPN Transistor |
|