Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BUL53BSMD |
Click to view a larger image
| Part Number | BUL53BSMD |
| Manufacturer | Seme LAB |
| Description | BUL53BSMD MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4... |
| Features |
• Multi-Base design for efficient energy distribution across the chip. • SIgnificantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple guard rings for improved control of high voltages. SMD1 Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB PD R? Tj Tstg Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Peak Collector... |
| Document |
 BUL53BSMD Data Sheet
PDF 20.58KB |
| Distributor | Stock | Price | Buy |
|---|
