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SeCoS |
P-Channel Enhancement Mode Power MOSFET A suffix of “-C” specifies halogen & lead-free High Dense Cell Design for Extremely Low RDS(on) Exceptional On-Resistance and Maximum DC Current Capability SOT-23 APPLICATION Interfacing Switching Load /Power Switching MARKING R1 PACK |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 3110 D F G H J REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0 1.40 1.70 2.30 0.28 0.55 REF. G H J K L Mill |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET The SMS4002-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS4002-C meet the RoHS and Green Pro |
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SeCoS |
P-Channel Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING S3 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2303-C Lead (Pb)-free and Halogen- |
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SeCoS |
N-Ch Small Signal MOSFET Epoxy Meets UL 94 V-0 Flammability Rating High Density Cell Design For Low On-Resistance Voltage Controlled Small Signal Switch Rugged and Reliable ESD Protected MECHANICAL DATA Case: SOT-23 Package Terminals: Solderable per MIL-STD-750 |
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SeCoS |
N-Channel MOSFET Voltage VDS Gate – Source Voltage Continuous Drain Current 1 VGS ID Pulsed Drain Current(tp=10µs) IDM Continuous Source-Drain Diode Current IS Power Dissipation Thermal Resistance from Junction to Ambient 1 Lead Temperature for Soldering Pur |
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SeCoS |
P-Channel Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super low Gate Charge Green Device Available MARKING S1 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2301-C Lead (Pb)-free and |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable ESD Protected up to 2.5KV(HBM) MARKING 72K PACKAGE INFORMATION Package MPQ |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET e Gate – Source Voltage Continuous Drain Current 1 Power Dissipation 1 Continuous Drain Current 2 Power Dissipation 2 Pulsed Drain Current 3 Maximum Junction-to-Lead Operating Junction & Storage Temperature Range TA= 25°C TA= 70°C TA= 25°C TA= 70°C T |
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SeCoS |
P-Channel MOSFET Low On-Resistance : 10Ω Low Input Capacitance: 30PF Low Out Put Capacitance : 10PF Low Threshold : 2V Fast Switching Speed : 2.5ns APPLICATIONS DC-DC Converter Cellular & PCMCIA Card Cordless Telephone Power Management in Portable and Battery etc MAR |
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SeCoS |
P-Channel MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING S33 SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50 REF. G H J |
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SeCoS |
P-Channel MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING R1A SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50 REF. |
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SeCoS |
N-Channel MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING R4 SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K |
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SeCoS |
N-Channel MOSFET Reliable and Rugged Green Device Available ESD Protection MARKING W28 = Date Code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3 |
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SeCoS |
N-Channel MOSFET MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current 1 TA=25°C ID TA=70°C IDM Power Dissipation PD Thermal Resistance from Jun |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0.89 1.40 1.70 2. |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 2012 F = Date code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2012-C Lead |
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SeCoS |
N-Channel Enhancement Mode Power MOSFET K High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Green Device Available F SOT-23 A L 3 Top View CB 1 1 2 E D G H 3 2 J MARKING K72 PACKAGE INFORMATION Package MPQ SOT-23 3K Leade |
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SeCoS |
P-Channel Enhancement Mode Power MosFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 3001 REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0.89 1.40 1.70 2.30 0.28 0.55 REF. G H J K L Millimeter Min. Max. 0 |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available MARKING 501DE PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D |
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