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SMS2012-C |
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| Part Number | SMS2012-C |
| Manufacturer | SeCoS |
| Description | The SMS2012-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch appli... |
| Features |
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 2012 F = Date code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2012-C Lead (Pb)-free and Halogen-free MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current @VGS=4.5V 1 ID TA=70°C Pulsed Drain Current 2 IDM Power Dissipation 3 TA=25°C PD TA=70°C Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistanc... |
| Document |
 SMS2012-C Data Sheet
PDF 602.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SMS201 |
MA-COM |
Silicon Schottky Diode |
|
| 2 | SMS2001-C |
SeCoS |
P-Channel MOSFET |
|
| 3 | SMS2002-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 4 | SMS2009E-C |
SeCoS |
N-Channel MOSFET |
|
| 5 | SMS202 |
MA-COM |
Silicon Schottky Diode |
|