SMS123 |
Part Number | SMS123 |
Manufacturer | SeCoS |
Description | The SMS123 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC... |
Features |
Voltage
VDS
Gate – Source Voltage Continuous Drain Current 1 VGS ID Pulsed Drain Current(tp=10µs) IDM Continuous Source-Drain Diode Current IS Power Dissipation Thermal Resistance from Junction to Ambient 1 Lead Temperature for Soldering Purposes (1/8’’ from case for 10s) Operating Junction & Storage Temperature Range PD RθJA TL TJ, TSTG http://www.SeCoSGmbH.com/ 10-Feb-2020 Rev. D Rating 100 ±20 0.17 0.68 0.17 0.35 357 260 150, -55~150 Unit V V A A A W °C / W °C °C Any changes of specification will not be informed individually. Page 1 of 3 Elektronische Bauelemente SMS123 0.17... |
Document |
SMS123 Data Sheet
PDF 150.04KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SMS12 |
Semtech Corporation |
TVS Diode Array For ESD and Latch-Up Protection | |
2 | SMS12 |
Leiditech |
TVS/ESD DIODE ARRAY AND LATCH-UP PROTECTION | |
3 | SMS12 |
ProTek Devices |
MULTI-LINE TVS ARRAY | |
4 | SMS12 |
Microsemi Corporation |
(SMS03 - SMS24) 4 LINE UNIDIRECTIONAL TVSarray | |
5 | SMS120 |
Diotec |
SMD Schottky Barrier Rectifier Diodes |