| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2179 [5LN01SS] 1.4 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 1 : Gate 2 : Source 3 : Drain 0.6 Specifications Absolute Maximum Ratings at Ta=25°C P |
|
|
|
|
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode · Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made smaller. · Small interterminal capacitance (C=0.69pF typ). · Small forward voltage (VF=0.23V max). Package D |
|
|
|
|
Sanyo Semicon Device |
Schottky Barrier Diode · Small-sized package facilitates high-density mounting and permits 1SS365-applied equipment to be made smaller. · Small interterminal capacitance. · Low forward voltage. · High breakdown voltage. Package Dimensions unit:mm 1148A [1SS365] 1:Anode 2 |
|
|
|
|
Sanyo Semicon Device |
Schottky Barrier Diode · Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS375-applied equipment to be made smaller. · Small interterminal capacitance. · Low forward voltage. · High breakdown voltage. Package Di |
|
|
|
|
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2179 [3LN01SS] 1.4 0.3 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.25 0.1 3 0.8 1.4 0.2 0.3 1 0.45 2 1 : Gate 2 : Source 3 : Drain 0.6 Specifications Absolute Maximum Ratings at Ta=25°C Pa |
|
|
|
|
Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • Package Dimensions unit : mm 2179 [3LP01SS] 1.4 0.3 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.25 0.1 3 0.8 1.4 0.2 0.3 1 0.45 2 1 : Gate 2 : Source 3 : Drain 0.6 SANYO : SSFP Specifications Absolute Maximum Ratings |
|
|
|
|
Sanyo Semicon Device |
P-Channel Silicon MOSFET • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive • Halogen free compliance P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-t |
|
|
|
|
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode · Small interterminal capacitance (C=0.45pF typ). · Low forward voltage and excellent detection efficiency (VF=0.35V max) · High breakdown voltage (VR=55V). · Very small-sized package permitting the 1SS345applied sets to be made small and slim. Pack |
|
|
|
|
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode · Small interterminal capacitance (C=0.69pF typ). · Low forward voltage (VF=0.23V max). · Very small-sized package permitting the 1SS350applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS350] 1:Anode 2:No contact 3:Cathode |
|
|
|
|
Sanyo Semicon Device |
Schottky Barrier Diode · Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS358-applied equipment to be made smaller. · Small interterminal capacitance (C=0.45pF typ). · Low forward voltage and excellent detection |
|
|
|
|
Sanyo Semicon Device |
Schottky Barrier Diode · Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS366-applied equipment to be made smaller. · Small interterminal capacitance. · Low forward voltage. · High breakdown voltage. Package Di |
|