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1SS358 |
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| Part Number | 1SS358 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number :EN4561A 1SS358 Schottky Barrier Diode VHF, UHF Detector and Mixer Applications Features · Series connection of 2 elements in a very small-sized package facilitates high-density moun... |
| Features |
· Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS358-applied equipment to be made smaller. · Small interterminal capacitance (C=0.45pF typ). · Low forward voltage and excellent detection efficiency (VF=0.35V max). · High breakdown voltage (VR=55V). Package Dimensions unit:mm 1251A [1SS358] 1:Anode 2:Cathode 3:Cathode, Anode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Reverse Burning Symbol VR IF P Tj Tstg ... |
| Document |
 1SS358 Data Sheet
PDF 55.14KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1SS350 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 2 | 1SS351 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 3 | 1SS351 |
ON Semiconductor |
Schottky Barrier Diode |
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| 4 | 1SS352 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
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| 5 | 1SS352 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE |
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