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1SS365 |
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| Part Number | 1SS365 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number :EN4562A 1SS365 Schottky Barrier Diode VHF, UHF Detector and Mixer Applications Features · Small-sized package facilitates high-density mounting and permits 1SS365-applied equipment ... |
| Features |
· Small-sized package facilitates high-density mounting and permits 1SS365-applied equipment to be made smaller. · Small interterminal capacitance. · Low forward voltage. · High breakdown voltage. Package Dimensions unit:mm 1148A [1SS365] 1:Anode 2:No connection 3:Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Forward Current Junction Temperature Storage Temperature Symbol VR IF Tj Tstg Conditions Ratings 10 35 125 –55 to +125 Unit V mA ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Forward Current Reverse Current In... |
| Document |
 1SS365 Data Sheet
PDF 50.22KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1SS360 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 2 | 1SS360F |
Toshiba Semiconductor |
Diode |
|
| 3 | 1SS361 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 4 | 1SS361CT |
Toshiba |
Silicon Epitaxial Planar Type Diode |
|
| 5 | 1SS361FV |
Toshiba |
Silicon Epitaxial Planar Type Diode |
|