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1SS350 |
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| Part Number | 1SS350 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number :EN3156A 1SS350 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Small interterminal capacitance (C=0.69pF typ). · Low forward voltage (VF=0.23V ... |
| Features |
· Small interterminal capacitance (C=0.69pF typ). · Low forward voltage (VF=0.23V max). · Very small-sized package permitting the 1SS350applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS350] 1:Anode 2:No contact 3:Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Forward Current Junction Temperature Storage Temperature Symbol VRM IF Tj Tstg Conditions Ratings 5 30 125 –55 to +125 Unit V mA ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Forward Current Reverse Current Interterminal Capaci... |
| Document |
 1SS350 Data Sheet
PDF 57.26KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1SS351 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 2 | 1SS351 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 3 | 1SS352 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 4 | 1SS352 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE |
|
| 5 | 1SS352 |
SEMTECH |
Silicon Epitaxial Planar Switching Diode |
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