Samsung semiconductor K1S fiche technique

No.	Partie #	Fabricant	Description
1	K1S1616B1A	Samsung semiconductor	1Mx16 bit Uni-Transistor Random Access Memory • • • • • • Preliminary UtRAM www.DataSheet4U.com GENERAL DESCRIPTION The K1S1616B1A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Packa
2	K1S3216BCD	Samsung semiconductor	2Mx16 bit Page Mode Uni-Transistor Random Access Memory • • • • • UtRAM GENERAL DESCRIPTION The K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user f
3	K1S1616BCA	Samsung semiconductor	1Mx16 bit Page Mode Uni-Transistor Random Access Memory • • • • • www.DataSheet4U.com UtRAM GENERAL DESCRIPTION The K1S1616BCA is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Sc
4	K1S2816BCM	Samsung semiconductor	8Mx16 bit Page Mode Uni-Transistor Random Access Memory • • • • • UtRAM GENERAL DESCRIPTION The K1S2816BCM is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip select
5	K1S64161CC	Samsung semiconductor	4Mx16 bit Page Mode Uni-Transistor Random Access Memory • • • • • UtRAM GENERAL DESCRIPTION The K1S64161CC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip select
6	K1S6416BCC	Samsung semiconductor	4Mx16 bit Page Mode Uni-Transistor Random Access Memory • • • • • UtRAM GENERAL DESCRIPTION The K1S6416BCC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip select
7	K1S321615M	Samsung semiconductor	2Mx16 bit Uni-Transistor Random Access Memory • • • • • • www.DataSheet4U.com UtRAM GENERAL DESCRIPTION The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell. The device support, extended temperature range and 48 ball Chip Scale Package for user
8	K1S32161CC	Samsung semiconductor	2Mx16 bit Page Mode Uni-Transistor Random Access Memory • • • • • www.DataSheet4U.com UtRAM GENERAL DESCRIPTION The K1S32161CC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Sc
9	K1S3216B1C	Samsung semiconductor	2Mx16 bit Uni-Transistor Random Access Memory • • • • • • www.DataSheet4U.com UtRAM GENERAL DESCRIPTION The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user