Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
K1S3216B1C |
Click to view a larger image
| Part Number | K1S3216B1C |
| Manufacturer | Samsung semiconductor |
| Description | The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibilit... |
| Features |
• • • • • • www.DataSheet4U.com UtRAM GENERAL DESCRIPTION The K1S3216B1C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 1.7V~2.1V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support • Package Type: 48-FBGA-6.0x8.0 PRODUCT FAMILY Power Dissipation Product Family Operating T... |
| Document |
 K1S3216B1C Data Sheet
PDF 160.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K1S3216BCC |
SAMSUNG Electronics |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
|
| 2 | K1S3216BCD |
Samsung semiconductor |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
|
| 3 | K1S321611C |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory |
|
| 4 | K1S321611C-FI70 |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory |
|
| 5 | K1S321611C-I |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory |
|