K1S32161CC |
Part Number | K1S32161CC |
Manufacturer | Samsung semiconductor |
Description | The K1S32161CC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Packa... |
Features |
• • • • • www.DataSheet4U.com UtRAM GENERAL DESCRIPTION The K1S32161CC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 2.7~3.1V Three State Outputs Compatible with Low Power SRAM • Support 4 page read mode • Package Type: 48-FBGA-6.00x8.00 PRODUCT FAMILY Product Family Ope... |
Document |
K1S32161CC Data Sheet
PDF 164.41KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K1S321611C |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory | |
2 | K1S321611C-FI70 |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory | |
3 | K1S321611C-I |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory | |
4 | K1S321615M |
Samsung semiconductor |
2Mx16 bit Uni-Transistor Random Access Memory | |
5 | K1S3216B1C |
Samsung semiconductor |
2Mx16 bit Uni-Transistor Random Access Memory |