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K1S321615M |
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| Part Number | K1S321615M |
| Manufacturer | Samsung semiconductor |
| Description | The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell. The device support, extended temperature range and 48 ball Chip Scale Package for user flexibility... |
| Features |
• • • • • • www.DataSheet4U.com UtRAM GENERAL DESCRIPTION The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell. The device support, extended temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 2.7~3.3V Three state output status Deep Power Down: Memory cell data hold invalid Package Type: 48-TBGA-9.00x12.00 • Compatible with Low Power SRAM PRODUCT FAMILY Product Fami... |
| Document |
 K1S321615M Data Sheet
PDF 206.57KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K1S321611C |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory |
|
| 2 | K1S321611C-FI70 |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory |
|
| 3 | K1S321611C-I |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory |
|
| 4 | K1S32161CC |
Samsung semiconductor |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
|
| 5 | K1S3216B1C |
Samsung semiconductor |
2Mx16 bit Uni-Transistor Random Access Memory |
|