| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samsung |
128Mbit GDDR2 SDRAM • 2.5V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • On-Die Termination for all inputs except CKE,ZQ • Output Driver Strength adjustment by EMRS • SSTL_18 compatible inputs/outputs • 4 banks operation • MRS c |
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Samsung |
256Mbit gDDR2 SDRAM • 1.8V + 0.1V power supply for device operation for -ZC25/2A • 1.8V + 0.1V power supply for I/O interface for -ZC25/2A • 2.0V + 0.1V power supply for device operation for -ZC20/22 • 2.0V + 0.1V power supply for I/O interface for -ZC20/22 • 4 Banks op |
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Samsung |
512Mbit gDDR2 SDRAM • 1.8V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • 4 Banks operation • Posted CAS • Programmable CAS Letency : 5, 6, 7 • Programmable Additive Latency : 0, 1, 2, 3, 4, 5, 6 • Write Latency (WL) = Read Laten |
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Samsung |
256Mbit gDDR2 SDRAM • 1.8V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • 4 Banks operation • Posted CAS • Programmable CAS Letency : 4,5,6 and 7 • Programmable Additive Latency : 0, 1, 2, 3. 4 and 5 • Write Latency (WL) = Read L |
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Samsung |
512Mbit gDDR2 SDRAM • 1.8V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • 4 Banks operation • Posted CAS • Programmable CAS Letency : 3,4,5 • Programmable Additive Latency : 0, 1, 2, 3 and 4 • Write Latency (WL) = Read Latency (R |
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Samsung |
512Mbit gDDR2 SDRAM • 1.8V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • 4 Banks operation • Posted CAS • Programmable CAS Letency : 3,4,5 • Programmable Additive Latency : 0, 1, 2, 3 and 4 • Write Latency (WL) = Read Latency (R |
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