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K4N26323AE-GC |
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| Part Number | K4N26323AE-GC |
| Manufacturer | Samsung |
| Description | - 1bank, 2bank system - Added System Selection mode in EMRS table. Revision 0.0 (August 2001) -3- Rev. 1.7 (Jan. 2003) K4N26323AE-GC 1M x 32Bit x 4 Banks GDDR2 Synchronous DRAM with Differential D... |
| Features |
• 2.5V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • On-Die Termination for all inputs except CKE,ZQ • Output Driver Strength adjustment by EMRS • SSTL_18 compatible inputs/outputs • 4 banks operation • MRS cycle with address key programs - CAS latency : 5, 6, 7 (clock) - Burst length : 4 only - Burst type : sequential only • Additive latency (AL): 0,1(clock) • Read latency(RL) : CL+AL • Write latency(WL) : AL+1 • Differential Data Strobes for Data-in, Date out ; - 4 DQS and /DQS(one differential strobe per byte) - Single Data Strobes by EMRS. • Edge ... |
| Document |
 K4N26323AE-GC Data Sheet
PDF 821.36KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K4N26 |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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| 2 | K4N25 |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
|
| 3 | K4N25A |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
|
| 4 | K4N25G |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
|
| 5 | K4N25H |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
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