K4N56163QF-GC |
Part Number | K4N56163QF-GC |
Manufacturer | Samsung |
Description | FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates ... |
Features |
• 1.8V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • 4 Banks operation • Posted CAS • Programmable CAS Letency : 4,5,6 and 7 • Programmable Additive Latency : 0, 1, 2, 3. 4 and 5 • Write Latency (WL) = Read Latency (RL) -1 • Burst Legth : 4 and 8 (Interleave/nibble sequential) • Programmable Sequential/ Interleave Burst Mode • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) • Off-chip Driver (OCD) Impedance Adjustment • On Die Termination • Refresh and Self Refresh Average Refesh Period 7.8us at lower then TCA... |
Document |
K4N56163QF-GC Data Sheet
PDF 1.37MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4N56163QG |
Samsung |
256Mbit gDDR2 SDRAM | |
2 | K4N51163QC |
Samsung |
512Mbit gDDR2 SDRAM | |
3 | K4N51163QC-ZC |
Samsung |
512Mbit gDDR2 SDRAM | |
4 | K4N51163QZ |
Samsung |
512Mbit gDDR2 SDRAM | |
5 | K4N25 |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |