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K4N56163QG |
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| Part Number | K4N56163QG |
| Manufacturer | Samsung |
| Description | FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates ... |
| Features |
• 1.8V + 0.1V power supply for device operation for -ZC25/2A • 1.8V + 0.1V power supply for I/O interface for -ZC25/2A • 2.0V + 0.1V power supply for device operation for -ZC20/22 • 2.0V + 0.1V power supply for I/O interface for -ZC20/22 • 4 Banks operation • Posted CAS • Programmable CAS Letency : 4,5,6 • Programmable Additive Latency : 0, 1, 2, 3. 4 and 5 • Write Latency (WL) = Read Latency (RL) -1 • Burst Legth : 4 and 8 (Interleave/nibble sequential) • Programmable Sequential/ Interleave Burst Mode • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)... |
| Document |
 K4N56163QG Data Sheet
PDF 961.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K4N56163QF-GC |
Samsung |
256Mbit gDDR2 SDRAM |
|
| 2 | K4N51163QC |
Samsung |
512Mbit gDDR2 SDRAM |
|
| 3 | K4N51163QC-ZC |
Samsung |
512Mbit gDDR2 SDRAM |
|
| 4 | K4N51163QZ |
Samsung |
512Mbit gDDR2 SDRAM |
|
| 5 | K4N25 |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
|