| No. | Partie # | Fabricant | Description | Fiche Technique |
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SamHop |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G STP SERIES TO-220 STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD |
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SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 50A R DS(ON) (m Ω) Typ 16 @ VGS=10V 22 @ VGS=4.5V D D G S G D S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD |
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SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 70A R DS(ON) (m Ω) Typ 12 @ VGS=10V 18 @ VGS=4.5V D D G D S G S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD- |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G STP SERIES TO-220 STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. D G D S S TP S E R IE S TO-220 G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-S |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless other |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise no |
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SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 36A R DS(ON) (m Ω) Max 27 @ VGS=10V 42 @ VGS=4.5V D D G S G D S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD |
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SamHop |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 22A R DS(ON) (m ) Max 19 @ VGS=10V 29 @ VGS=4.5V D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS V |
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SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F package. D G G D S STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TS |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 80A R DS(ON) (m Ω) Max 4.8 @ VGS=10V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G S S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless othe |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise no |
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SamHop Microelectronics |
N-Channel Logic Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 60A R DS(ON) (m Ω) Max 9 @ VGS=10V 11 @ VGS=4.5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-22 |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 60A R DS(ON) (m Ω) Max 9.2 @ VGS=10V 11.5 @ VGS=4.5V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S ABSOLUTE MAXIMUM RATINGS ( |
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SamHop |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G STP SERIES TO-220 STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD |
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SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 80A R DS(ON) (m Ω) Typ 9.5 @ VGS=10V 13.5 @ VGS=4.5V D D G D S G S G S TP S E R IE S TO-220 S TB S E R IE S TO-263( |
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SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. D G D S G S TP S E R IE S TO-220 S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TST |
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SamHop |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Volta |
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SamHop |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 40A R DS(ON) (m Ω) Typ 20 @ VGS=10V D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS |
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