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STP820S |
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| Part Number | STP820S |
| Manufacturer | SamHop Microelectronics |
| Description | STB820S Sa mHop Microelectronics C orp. STP820SGreen Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 15 @ VGS=10V 75V 54A... |
| Features |
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
D
GS S TB S E R IE S T O -263(DD-P AK )
G D S
S TP S E R IE S TO-220
D
G S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage VGS Gate-Source Voltage
75 ±20
ID
Drain Current-Continuous c
TC=25°C TC=70°C
54 45
IDM -Pulsed a c
159
EAS Single Pulse Avalanche Energy d
121
TC=25°C
PD
Maximum Power Dissipation
TC=70°C
100 70
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
THERM... |
| Document |
 STP820S Data Sheet
PDF 134.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP80L60 |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | STP80N03L-06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 3 | STP80N05-09 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 4 | STP80N06-10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 5 | STP80N10F7 |
STMicroelectronics |
N-Channel Power MOSFET |
|