| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
STP9NK65ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
|
|
|
|
STMicroelectronics |
STP9NK50ZFP |
|
|
|
|
STMicroelectronics |
STP9NK60ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
|
|
|
|
STMicroelectronics |
STP9NB50FP t (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C De |
|
|
|
|
STMicroelectronics |
STP9NC60FP n- gate Voltage (R GS = 20 kΩ ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insula |
|
|
|
|
STMicroelectronics |
STP9NK50Z |
|
|
|
|
STMicroelectronics |
STP9NK50ZFP |
|
|
|
|
STMicroelectronics |
STP9NB50FP ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissip |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes VDS @ TJmax RDS(on) max. ID STD9N60M2 STP9N60M2 650 V 0.78 Ω 5.5 A STU9N60M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected PTOT 60 W Package DPAK TO-220 IPAK |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 VDS RDS(on) max ID 650 V 0.9 Ω 5A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram , T |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code STP9N80K5 STW9N80K5 VDS 800 V RDS(on) max. 0.90 Ω ID 7A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET TYPE STP9NK80Z STF9NK80Z s s Figure 1: Package ID 7.5 A 7.5 A Pw 150 W 35 W VDSS 800 V 800 V RDS(on) <1.2 Ω <1.2 Ω TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY s 100% AVALANCHE RATED s GATE CHARGE MINIMIZED s |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.56Ω <0.56Ω <0.56Ω <0.56Ω ID 3 7.5A 1 3 2 2 1 7.5A 7.5A 7.5A(1) 3 1 IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche test |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes STD9NM40N STP9NM40N VDSS@TJMAX RDS(on)max. ID 450 V < 0.79 Ω 5.6 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-ch |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description This seri |
|
|
|
|
STMicroelectronics |
N-channel MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
|