STP9N65M2 |
Part Number | STP9N65M2 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance... |
Features |
Order codes
STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2
VDS
RDS(on) max
ID
650 V 0.9 Ω
5A
• Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram , TAB Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance and optimized switching characteristics. They are therefore suitable for the most demanding hig... |
Document |
STP9N65M2 Data Sheet
PDF 1.27MB |
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