STP9NM40N |
Part Number | STP9NM40N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to ... |
Features |
Order codes STD9NM40N STP9NM40N
VDSS@TJMAX RDS(on)max. ID
450 V
< 0.79 Ω 5.6 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TAB 3 1 DPAK TAB 3 2 1 TO-220 ... |
Document |
STP9NM40N Data Sheet
PDF 579.90KB |
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