| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% * • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss App |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Type VDSS RDS(on) RDS(on)*Qg STB11NM80 800V < 0.40Ω 14Ω*nC STF11NM80 800V < 0.40Ω 14Ω*nC STP11NM80 800V < 0.40Ω 14Ω*nC STW11NM80 800V < 0.40Ω 14Ω*nC ID 11A 11A 11A 11A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% * • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Appl |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET www.DataSheet4U.com Type VDSS (@TJ=TJmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 ■ ■ ■ ■ 11A 11A 11A 11A TO-220 1 2 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% |
|
|
|
|
STMicroelectronics |
STP11NK50ZFP Type STB11NK50Z STP11NK50ZFP STP11NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw < 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic |
|
|
|
|
STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 15 60 60 5 2 4 50 50 2 -65 to 150 150 TIP112 TIP117 100 100 Uni t V V V A A mA W W o o C C Max. O perating Junction Temperature * For PNP types voltage and current values are negative June 1999 1/6 TIP110/TIP112/TIP115/TIP117 THERMAL DATA R t |
|
|
|
|
STMicroelectronics |
N-Channel Power MOSFET TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP11NM60ND 650 V 450 mΩ 10 A • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ru |
|
|
|
|
STMicroelectronics |
STP11NM50N Order codes STD11NM50N STF11NM50N STP11NM50N VDSS @TJmax RDS(on) max 550 V < 0.47 Ω ID 8.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These dev |
|
|
|
|
STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 15 60 60 5 2 4 50 50 2 -65 to 150 150 TIP112 TIP117 100 100 Uni t V V V A A mA W W o o C C Max. O perating Junction Temperature * For PNP types voltage and current values are negative June 1999 1/6 TIP110/TIP112/TIP115/TIP117 THERMAL DATA R t |
|
|
|
|
STMicroelectronics |
Overvoltage protection device ■ Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS(on) of 165 mΩ ■ Integrated charge pump ■ Maximum continuous current of 2 A ■ Thermal shutdown ■ Soft-start feature to control the inrush current ■ E |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code STP110N8F7 VDS 80 V RDS(on)max 7.5 mΩ ID 80 A PTOT 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applicati |
|
|
|
|
STMicroelectronics |
LNB supply and control voltage regulator ■ Simplest integrated solution for LNB remote supply and control ■ 500 mA guaranteed output current ■ Dual input supply for reducing power dissipation (DFN package) ■ 3-state function to enable/disable and select the output voltage level through a si |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STP11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID 10 A PTOT 110 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener- |
|
|
|
|
STMicroelectronics |
LNBP supply and control voltage regulator summary ■ Complete interface for two LNBs remote supply and control ■ LNB selection and stand-by function ■ Built-in tone oscillator factory trimmed at 22KHz ■ Fast oscillator start-up facilitates DiSEqCTM encoding ■ Two supply inputs for lowest diss |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum t |
|
|
|
|
STMicroelectronics |
STP11NK50Z Type STB11NK50Z STP11NK50ZFP STP11NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw < 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes STD11NM50N STF11NM50N STP11NM50N ■ ■ ■ VDSS @TJmax RDS(on) max < 0.47 Ω ID 1 3 3 550 V 8.5 A DPAK 1 2 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP 3 1 2 Application Swi |
|
|
|
|
STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 15 60 60 5 2 4 50 50 2 -65 to 150 150 TIP112 TIP117 100 100 Uni t V V V A A mA W W o o C C Max. O perating Junction Temperature * For PNP types voltage and current values are negative June 1999 1/6 TIP110/TIP112/TIP115/TIP117 THERMAL DATA R t |
|
|
|
|
STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 15 60 60 5 2 4 50 50 2 -65 to 150 150 TIP112 TIP117 100 100 Uni t V V V A A mA W W o o C C Max. O perating Junction Temperature * For PNP types voltage and current values are negative June 1999 1/6 TIP110/TIP112/TIP115/TIP117 THERMAL DATA R t |
|
|
|
|
STMicroelectronics |
STP11NM60FP iniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (conti |
|