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STP110N7F6 |
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| Part Number | STP110N7F6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 Order... |
| Features |
Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W
3 2 1
TO-220
Figure 1. Internal schematic diagram
' 7$%
*
• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 Order code STP110N7F6 $0Y Table 1. Device summary Marking Package 110N7F6 TO-220 Packing Tube ... |
| Document |
 STP110N7F6 Data Sheet
PDF 626.27KB |
| Distributor | Stock | Price | Buy |
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