P11NM60FP |
Part Number | P11NM60FP |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resista... |
Features |
iniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
TO-220
TO-220FP
3 1
D PAK
2
3 12
I2PAK
INTERNAL SCHEMATIC DIAGRAM
Value STP(B)11NM60(... |
Document |
P11NM60FP Data Sheet
PDF 447.05KB |
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