STP11N60DM2 STMicroelectronics N-CHANNEL POWER MOSFET Datasheet, en stock, prix

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STP11N60DM2

STMicroelectronics
STP11N60DM2
STP11N60DM2 STP11N60DM2
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Part Number STP11N60DM2
Manufacturer STMicroelectronics (https://www.st.com/)
Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable...
Features Order code STP11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID 10 A PTOT 110 W
 Fast-recovery body diode
 Extremely low gate charge and input capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected Applications
 Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS...

Document Datasheet STP11N60DM2 Data Sheet
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