| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz |
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STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories summary ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 66MHz – Random Access |
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STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories summary ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 66MHz – Random Access |
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STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory SUMMARY ■ ■ ■ SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PERFORMANCE – Access Time: 45, 55 and 60ns – 75MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – A |
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STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory SUMMARY ■ ■ ■ SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PERFORMANCE – Access Time: 45, 55 and 60ns – 75MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – A |
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STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory SUMMARY ■ ■ ■ SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PERFORMANCE – Access Time: 45, 55 and 60ns – 75MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – A |
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STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory SUMMARY ■ ■ ■ SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PERFORMANCE – Access Time: 45, 55 and 60ns – 75MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – A |
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STMicroelectronics |
64 Mbit Low Voltage Flash Memories |
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STMicroelectronics |
64 Mbit Low Voltage Flash Memories |
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STMicroelectronics |
(M58LT128GSB / M58LT128GST) Flash Memories Summary ■ SUPPLY VOLTAGE – VDD = 1.7 to 2.0V for program, erase and read – VDDQ = 2.7 to 3.6V for I/O Buffers – VPP = 9V for fast program SYNCHRONOUS / ASYNCHRONOUS READ – Random Access: 110ns – Asynchronous Page Read: 25ns. – Synchronous Burst Read |
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STMicroelectronics |
(M58LT256JSB / M58LT256JST) Flash memories ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O Buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – Random access: 85 ns – Asynchronous Page |
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STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz |
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STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories summary ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 66MHz – Random Access |
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STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories summary ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 66MHz – Random Access |
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STMicroelectronics |
(GM5862H / GM5868H) LCD monitor controllers ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Dual LVDS transmitter for direct interconnect to LCD panels up to WUXGA 60 Hz Package: 256-pin PQFP Triple ADC and PLL up to 205 MHz Integrated Ultra-Reliable DVI® receiver up to 165 MHz (GM5862 and GM5822) Integrated H |
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STMicroelectronics |
(GM5862H / GM5868H) LCD monitor controllers ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Dual LVDS transmitter for direct interconnect to LCD panels up to WUXGA 60 Hz Package: 256-pin PQFP Triple ADC and PLL up to 205 MHz Integrated Ultra-Reliable DVI® receiver up to 165 MHz (GM5862 and GM5822) Integrated H |
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STMicroelectronics |
FLASH MEMORY SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Packages SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode : 52MHz – A |
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STMicroelectronics |
FLASH MEMORY SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Packages SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode : 52MHz – A |
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STMicroelectronics |
(M58LT128GSB / M58LT128GST) Flash Memories Summary ■ SUPPLY VOLTAGE – VDD = 1.7 to 2.0V for program, erase and read – VDDQ = 2.7 to 3.6V for I/O Buffers – VPP = 9V for fast program SYNCHRONOUS / ASYNCHRONOUS READ – Random Access: 110ns – Asynchronous Page Read: 25ns. – Synchronous Burst Read |
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STMicroelectronics |
(M58LT128HSB / M58LT128HST) Flash memories ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – Asynchronous Page Read mode – Random Acc |
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